Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials
Structure and dielectric properties of amorphous LaAlO3 and LaAlOxNy films as alternative gate dielectric materials
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DOI：
10.1063/1.1586976
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发表时间：
2003-06
影响因子：
3.2
通讯作者：
X. Lu;Zhi-guo Liu;Yiping Wang;Ying Yang;Xiao-Ping Wang;Honghui Zhou;B. Nguyen
中科院分区：
文献类型：
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作者：
X. Lu;Zhi-guo Liu;Yiping Wang;Ying Yang;Xiao-Ping Wang;Honghui Zhou;B. Nguyen
采用脉冲激光沉积技术在Si（100）和Pt涂层Si衬底上制备了非晶LaAlO 3（LAO）和非晶LAOxNy（拉翁）薄膜。X射线衍射、透射电子显微镜和差热分析研究表明，这两种薄膜在860 °C的高温下仍保持非晶态。原子力显微镜的研究表明，沉积的薄膜的表面是非常光滑的均方根粗糙度为0.14 nm的8 nm LAO。拉翁膜具有比LAO膜更光滑的表面。高分辨透射电镜研究表明，LAO与Si之间经常发生界面反应。得到了一种几乎没有界面层的拉翁/Si结构。对于LAO薄膜，已经获得了6.55eV的高带隙和25-27的中等介电常数。拉翁薄膜的等效氧化层厚度仅为1.1 nm，漏电流为0.074 A/cm ~ 2（Vg =+1 V）。
Amorphous LaAlO3 (LAO) and LAOxNy (LAON) films have been prepared by pulsed laser deposition technique on Si (100) substrates and Pt coated silicon substrates. X-ray diffraction, transmission electron microscopy and differential thermal analysis investigations showed that both kinds of films remain amorphous up to a high temperature of 860 °C. Atomic force microscopy study indicated that the surface of the deposited films is very smooth with a root mean square roughness of 0.14 nm for 8 nm LAO. LAON films have a smoother surface than that of LAO films. High-resolution transmission electron microscope studies showed there often exists interfacial reaction between LAO and Si. One LAON/Si structure nearly without interfacial layer has been obtained. For LAO films, high bandgap of 6.55 eV and medium dielectric constant of 25–27 have been obtained. The LAON films showed small equivalent oxide thickness of 1.1 nm with a low leakage of 0.074 A/cm2@Vg=+1 V. It is proposed that amorphous LAON films are very promis...