Complete optical isolation created by indirect interband photonic transitions
Complete optical isolation created by indirect interband photonic transitions
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DOI：
10.1038/nphoton.2008.273
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发表时间：
2009-02-01
期刊：
影响因子：
35
通讯作者：
Fan, Shanhui
中科院分区：
文献类型：
--
作者：
Yu, Zongfu;Fan, Shanhui
实现片上光信号隔离是集成光子学中的一个基本困难（1）。克服这一困难的需求变得越来越迫切，特别是随着硅纳米光子学的出现，它有望以前所未有的集成规模创建片上光学系统。到目前为止，还没有使用与硅CMOS工艺基本兼容的材料或工艺来提供完整的片上信号隔离的技术。基于光子跃迁的效应（5，6），我们在这里表明，线性，宽带和非互易隔离可以通过时空折射率调制，同时赋予频率和波矢移动在光子跃迁过程中完成。我们进一步表明，非互易效应可以在动态调制的微米级环形谐振器结构中完成。这项工作表明，芯片上的隔离可以完成与动态光子结构的标准材料系统，广泛用于集成光电应用。
Achieving on-chip optical signal isolation is a fundamental difficulty in integrated photonics(1). The need to overcome this difficulty is becoming increasingly urgent, especially with the emergence of silicon nano-photonics(2-4), which promises to create on-chip optical systems at an unprecedented scale of integration. Until now, there have been no techniques that provide complete on-chip signal isolation using materials or processes that are fundamentally compatible with silicon CMOS processes. Based on the effects of photonic transitions(5,6), we show here that a linear, broadband and nonreciprocal isolation can be accomplished by spatial-temporal refractive index modulations that simultaneously impart frequency and wavevector shifts during the photonic transition process. We further show that a non-reciprocal effect can be accomplished in dynamically modulated micrometre-scale ring-resonator structures. This work demonstrates that on-chip isolation can be accomplished with dynamic photonic structures in standard material systems that are widely used for integrated optoelectronic applications.