Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
Monolithic integration of Giant Magnetoresistance (GMR) devices onto standard processed CMOS dies
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DOI：
10.1016/j.mejo.2014.03.015
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发表时间：
2014-06-01
影响因子：
2.2
通讯作者：
Freitas, P. P.
中科院分区：
文献类型：
--
作者：
-Dolores Cubells-Beltran, M.;Reig, C.;Freitas, P. P.
巨磁电阻（GMR）为基础的技术是目前首选的低磁场传感学科，如生物技术或微电子。它们与标准CMOS工艺的兼容性目前正在研究，这是开发需要紧凑电子读出的新应用的关键点。在本文中，这种兼容性已经用两个特定的非专用CMOS标准进行了实验研究：来自AMS（奥地利微系统）的035 pm和来自CNM（巴塞罗那国家微电子中心）的2.5 mu m作为代表性例子。GMR测试装置已经被设计和制造在这两种技术的加工芯片上。为了评估所获得的器件，进行了扩展的表征，包括直流磁测量和噪声分析。此外，还建立了一个二维有限元模型，包括GMR器件电阻与磁场的关系，并进行了仿真。它的潜在用途作为电流传感器在集成电路水平也已被证明。(C) 2014 Elsevier Ltd.版权所有。
Giant Magnetoresistance (GMR) based technology is nowadays the preferred option for low magnetic fields sensing in disciplines such as biotechnology or microelectronics. Their compatibility with standard CMOS processes is currently investigated as a key point for the development of novel applications, requiring compact electronic readout. In this paper, such compatibility has been experimentally studied with two particular non-dedicated CMOS standards: 035 pm from AMS (Austria MicroSystems) and 2.5 mu m from CNM (Centre Nacional de Microelectronica, Barcelona) as representative examples. GMR test devices have been designed and fabricated onto processed chips from both technologies. In order to evaluate so obtained devices, an extended characterization has been carried out including DC magnetic measurements and noise analysis. Moreover, a 2D-FEM (Finite Element Method) model, including the dependence of the GMR device resistance with the magnetic field, has been also developed and simulated. Its potential use as electric current sensors at the integrated circuit level has also been demonstrated. (C) 2014 Elsevier Ltd. All rights reserved.