Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling
Comparative Study of RESURF Si/SiC LDMOSFETs for High-Temperature Applications Using TCAD Modeling
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DOI：
10.1109/ted.2017.2719898
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发表时间：
2017-09-01
影响因子：
3.1
通讯作者：
Gammon, P. M.
中科院分区：
文献类型：
--
作者：
Chan, C. W.;Li, F.;Gammon, P. M.
本文分析了采用硅对采用结隔离和介电隔离减少表面电场技术实现600 v ldmosfet的半绝缘SiC （Si/SiC）器件结构的影响，该器件采用高达300℃的高温操作，对两个采用PN或绝缘体上硅（SOI）设计的Si/SiC晶体管及其采用体硅或SOI衬底的等效结构进行了仿真。通过比较，表明Si/SiC器件具有与SOI器件一样低的失态泄漏电流。然而，SOI LDMOSFET的低侧电阻值更小，对温度的敏感性更低，优于Si/SiC器件。相反，在高侧配置下，Si/SiC晶体管在高衬底偏置下的电阻低于SOI，并且在衬底电位高达-200 V时保持不变，其行为与300 K时的块硅LDMOS相似。此外，在技术计算机辅助设计模拟中，使用矩形功率脉冲设置证明了Si/SiC相对于其他结构的热优势。
This paper analyses the effect of employing an Si on semi-insulating SiC (Si/SiC) device architecture for the implementation of 600-V LDMOSFETs using junction isolation and dielectric isolation reduced surface electric field technologies for high-temperature operations up to 300 degrees C. Simulations are carried out for two Si/SiC transistors designed with either PN or silicon-on-insulator (SOI) and their equivalent structures employing bulk-Si or SOI substrates. Through comparisons, it is shown that the Si/SiC devices have the potential to operate with an off-state leakage current as low as the SOI device. However, the low-side resistance of the SOI LDMOSFET is smaller in value and less sensitive to temperature, outperforming both Si/SiC devices. Conversely, under high-side configurations, the Si/SiC transistors have resistances lower than that of the SOI at high substrate bias, and invariable with substrate potential up to -200 V, which behaves similar to the bulk-Si LDMOS at 300 K. Furthermore, the thermal advantage of the Si/SiC over other structures is demonstrated by using a rectangle power pulse setup in Technology Computer-Aided Design simulations.