The Role of Surface Energies and Chemical Potential during Nanowire Growth
The Role of Surface Energies and Chemical Potential during Nanowire Growth
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DOI：
10.1021/nl104267p
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发表时间：
2011-03-01
期刊：
影响因子：
10.8
通讯作者：
Bakkers, Erik P. A. M.
中科院分区：
文献类型：
--
作者：
Algra, Rienk E.;Verheijen, Marcel A.;Bakkers, Erik P. A. M.
我们提出了一种定量测定纳米线气-液-固生长过程中液滴、固-液和液-汽界面能随第三族分压变化时化学势的大小和变化的方法。在这项研究中，我们使用了间隙孪生超晶格纳米线。我们表明，伽马(LV)是对Ga分压(p(Ga))最敏感的量，它对p(Ga)的依赖性是伽马(SL)或Delta Mu的三到四倍，因此表面能对决定孪晶密度的作用与化学势一样重要。这一意想不到的结果表明，表面活性剂可以在纳米线生长过程中用来设计纳米线的缺陷结构和晶体结构。
We present an approach to quantitatively determine the magnitudes and the variation of the chemical potential in the droplet (Delta mu), the solid liquid (gamma(SL)) and the liquid-vapor (gamma(LV)) interface energies upon variation of the group III partial pressure during vapor-liquid-solid growth of nanowires. For this study, we use GaP twinning superlattice nanowires. We show that gamma(LV) is the quantity that is most sensitive to the Ga partial pressure (p(Ga)), its dependence on p(Ga) being three to four times as strong as that of gamma(SL) or Delta mu, and that as a consequence the surface energies are as important in determining the twin density as the chemical potential. This unexpected result implies that surfactants could be used during nanowire growth to engineer the nanowire defect structure and crystal structure.