Impurity Contamination and Diffusion during Annealing in Implanted ZnO
Impurity Contamination and Diffusion during Annealing in Implanted ZnO
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注入 ZnO 退火过程中的杂质污染和扩散
DOI：
10.4028/www.scientific.net/kem.388.23
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
N. Ohashi
中科院分区：
文献类型：
--
作者：
I. Sakaguchi;Y. Adachi;Takeshi Ogaki;Kenji Matsumoto;S. Hishita;H. Haneda;N. Ohashi
研究了离子注入对ZnO陶瓷衬底中锂杂质的污染和扩散的影响。在1000和850°C退火的注入ZnO中的Li的扩散系数与未注入ZnO中的扩散系数具有良好的一致性。在700°C下，Li在注入ZnO中的扩散强烈增强。结果表明，注入引入的缺陷在低温退火时增强了杂质的扩散。
The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850°C were in good agreement with those in the non-implanted ZnO. At 700°C, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing.