NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN CZ-SI WAFERS
NUCLEATION AND GROWTH OF OXIDE PRECIPITATES IN CZ-SI WAFERS
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DOI：
10.1557/jmr.1993.2889
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发表时间：
1993-11-01
影响因子：
2.7
通讯作者：
OGAWA, T
中科院分区：
文献类型：
--
作者：
ATAKA, M;OGAWA, T
当N (B)摩尔的氧原子溶解成N (A)摩尔的硅晶片,氧原子的浓度的硅晶片是由摩尔分数X (B) = N (B) / (NA + NB)和过饱和度定义为σ= X (X (B) / (B、T)) - 1 X(废话,T)是饱和状态时的温度T的摩尔分数我们已经证明σ=氧原子之间的化学电位差饱和及过饱和状态如果σ小于1。在这里，自发生成速率与sigma（gamma）成正比，其中gamma是硅片中临界氧化物颗粒中的氧原子数。低温加热（约700℃）的持续时间将决定氧化物沉淀的核数，而接近950℃的处理对氧化物颗粒的生长是非常有效的，因为氧化物颗粒的生长是由原子的扩散决定的。在低温处理之前，在高于1000℃的温度下进行预热，可以有效地溶解Si-O对并生成间隙氧原子，其中Si-O对是晶体生长后冷却阶段生成的。
When N(B) is moles of oxygen atoms dissolved into an Si wafer of N(A) moles, the concentration of oxygen atoms in the Si wafer is given by mole fraction as X(B) = N(B)/(NA + NB), and the degree of supersaturation is defined by sigma = (X(B)/X(BS,T)) - 1 where X(BS,T) is the mole fraction of the saturated state at temperature T. We have proved that sigma is equal to the chemical potential difference of oxygen atoms in between saturated and supersaturated states if sigma much less than 1. Here the spontaneous generation rate is proportional to sigma(gamma), where gamma is the number of the oxygen atoms in the critical oxide particles in the Si wafers. Duration time of a low temperature heating (at about 700-degrees-C) will determine the number of nuclei for oxide precipitates, and a treatment near 950-degrees-C is very effective on growth of oxide particles, because growth of the oxide particles is determined by diffusion of the atoms. Before the low temperature treatments, preheating at a temperature higher than 1000-degrees-C is effective in dissolving Si-O pairs and making interstitial oxygen atoms, where the Si-O pairs have been generated by the cooling stage after the crystal growth.