N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
N2-Plasma-Treated Ga2O3(Gd2O3) as Interface Passivation Layer for Ge MOS Capacitor With HfTiON Gate Dielectric
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DOI：
10.1109/ted.2016.2565691
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发表时间：
2016-05
影响因子：
3.1
通讯作者：
Yong Huang;Jingping Xu;Lu Liu;P. Lai;Wing-Man Tang
中科院分区：
文献类型：
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作者：
Yong Huang;Jingping Xu;Lu Liu;P. Lai;Wing-Man Tang
比较了在使用或不使用 N2 等离子体处理为 Ge MOS 电容器的界面钝化层 (IPL) 的情况下，在 Ga2O3(Gd2O3) (GGO) 上溅射掺钛 Hf 氮氧化物的界面和电性能。结果发现，经N2等离子体处理的GGO IPL样品具有低界面态密度（3.4×1011 cm-2 eV-1）、小栅极漏电流（2.93×10-5 A/cm2，Vg = Vfb + 1 V）、小电容等效厚度（1.09 nm）和大等效介电常数（26.5）。其机制在于N2等离子体处理的GGO IPL可以有效阻止元素的相互扩散并抑制GeOx界面层的形成。
The interfacial and electrical properties of sputtered Ti-incorporated Hf oxynitride on Ga2O3(Gd2O3) (GGO) with or without N2-plasma treated as an interfacial passivation layer (IPL) for Ge MOS capacitor are compared. It is found that low interface-state density (3.4 × 1011 cm-2 eV-1), small gate leakage current (2.93 × 10-5 A/cm2 at Vg = Vfb + 1 V), small capacitance equivalent thickness (1.09 nm), and large equivalent dielectric constant (26.5) can be achieved for the sample with N2-plasma-treated GGO IPL. The involved mechanisms lie in the fact that the N2-plasma-treated GGO IPL can effectively block the interdiffusion of elements and suppress the formation of GeOx interfacial layer.