Development of Si-CMOS hybrid detectors towards electron tracking based Compton imaging in semiconductor detectors
Development of Si-CMOS hybrid detectors towards electron tracking based Compton imaging in semiconductor detectors
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DOI：
10.1016/j.nima.2017.11.078
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发表时间：
2017-12
期刊：
影响因子：
--
通讯作者：
H. Yoneda;S. Saito;S. Watanabe;H. Ikeda;Tadayuki Takahashi
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文献类型：
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作者：
H. Yoneda;S. Saito;S. Watanabe;H. Ikeda;Tadayuki Takahashi
基于电子跟踪的康普顿成像是通过测量反冲电子的初始方向来提高康普顿相机灵敏度的关键技术。为了在半导体康普顿相机中实现这一技术，我们提出了一种新的探测器概念--硅-cmos混合探测器。它是一个硅探测器，用凸点键合到cmos读出集成电路上，以获得电子轨迹图像。为了获取能量和事件定时，在该概念中还读出来自N侧的信号。通过使用专用集成电路进行N侧读出，实现了少μS的时序分辨率。在本文中，我们给出了两个具有20μm节距像素的样机的结果。用它们成功地获得了反冲电子轨迹的图像。在59.5keV处，能量分辨率(FWHM)分别为4.1keV(CMOS)和1.4keV(N侧)。此外，我们还利用基于图论方法的重建算法确定了电子的初始方向。这些结果表明，硅-cmos混合探测器可以用于基于康普顿成像的电子跟踪。
Electron tracking based Compton imaging is a key technique to improve the sensitivity of Compton cameras by measuring the initial direction of recoiled electrons. To realize this technique in semiconductor Compton cameras, we propose a new detector concept, Si-CMOS hybrid detector. It is a Si detector bump-bonded to a CMOS readout integrated circuit to obtain electron trajectory images. To acquire the energy and the event timing, signals from N-side are also read out in this concept. By using an ASIC for the N-side readout, the timing resolution of few μs is achieved. In this paper, we present the results of two prototypes with 20 μm pitch pixels. The images of the recoiled electron trajectories are obtained with them successfully. The energy resolutions (FWHM) are 4. 1 keV (CMOS) and 1. 4 keV (N-side) at 59.5 keV. In addition, we confirmed that the initial direction of the electron is determined using the reconstruction algorithm based on the graph theory approach. These results show that Si-CMOS hybrid detectors can be used for electron tracking based Compton imaging.