Detection of spin polarization utilizing singlet and triplet states in a single-lead quantum dot
Detection of spin polarization utilizing singlet and triplet states in a single-lead quantum dot
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DOI：
10.1103/physrevb.86.081308
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发表时间：
2012-06
影响因子：
3.7
通讯作者：
T. Otsuka;Yuuki Sugihara;J. Yoneda;S. Katsumoto;S. Tarucha
中科院分区：
文献类型：
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作者：
T. Otsuka;Yuuki Sugihara;J. Yoneda;S. Katsumoto;S. Tarucha
我们提出并证明了一种在低磁场和零磁场下探测半导体微器件中局部自旋极化的新方法。通过将单引线量子点连接到半导体微器件上，并监测量子点中的电子隧穿进入单态和三态，我们可以检测到靶器件中形成的局域自旋极化。我们利用自旋分裂量子霍尔边态验证了该检测方案的有效性。我们还在低磁场下观察到了器件边缘的非零局部自旋极化，这是常规宏观探针无法检测到的。
We propose and demonstrate a new method to probe local spin polarization in semiconductor micro devices at low and zero magnetic fields. By connecting a single-lead quantum dot to a semiconductor micro device and monitoring electron tunneling into singlet and triplet states in the dot, we can detect the local spin polarization formed in the target device. We confirm the validity of this detection scheme utilizing spin split quantum Hall edge states. We also observe non-zero local spin polarization at the device edge in low magnetic fields, which is not detectable with conventional macroscopic probes.