Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Defects formed by pulsed laser annealing: electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
复制标题
脉冲激光退火形成的缺陷：通过深能级瞬态光谱测量 n 型硅的电特性和深度分布
DOI：
10.1002/pssc.201000166
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
H. Ryssel
中科院分区：
文献类型：
--
作者：
D. Schindele;P. Pichler;J. Lorenz;P. Oesterlin;H. Ryssel
微电子器件的持续缩小要求掺杂激活与扩散保持在最低限度。在器件加工中考虑的一种方法是脉冲激光微秒退火。这是一种高度不平衡的过程，在此过程中，表面产生的固有点缺陷扩散到材料中，并在冷却过程中形成各种缺陷。由于缺陷靠近表面，它们很可能影响先进技术pn -结中漏电流的有效浓度和形成。这些缺陷可能是固有点缺陷的团簇或含有残余杂质，如氧或掺杂剂。在这项工作中，用脉冲激光对裸n型硅衬底（磷浓度为5 × 1014cm-3）进行了退火，最高温度约为800 K至1650 K。利用深能级瞬态光谱（DLTS）对退火后的缺陷进行了表征，得到了它们的活化能，并捕获了n型硅中大多数载流子的截面。此外，通过脉冲电压的变化测量了这些缺陷的深度分布。发现的主要缺陷等级为atEC - 0.41 eV,EC - 0.31 eV,EC - 0.3 eV,EC - 0.22 eV和dec - 0.17 eV。（©2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The ongoing downscaling of microelectronic devices requires dopant activation with diffusion kept to a minimum. One method considered in device processing is microsecond annealing by pulsed lasers. This is a highly non‐equilibrium process during which intrinsic point defects generated at the surface diffuse into the material and form a variety of defects during cooling‐down. Since the defects lie close to the surface, they may well affect the effective concentration and the formation of leakage currents in pn‐junctions of advanced technologies. These defects may be clusters of intrinsic point defects or contain residual impurities like oxygen or dopants.In this work, a bare n‐type silicon substrate (phosphorus concentration 5 × 1014cm–3) was annealed with a pulsed laser with maximum temperatures of about 800 K up to 1650 K. The defects remaining after annealing were characterized by deep level transient spectroscopy (DLTS) to obtain their activation energies and capture cross‐sections for majority carriers in n‐type silicon. Additionally, the depth profiles of these defects were measured via a variation of the pulse voltage. The dominating defects found have levels atEC– 0.41 eV,EC– 0.31 eV,EC– 0.3 eV,EC– 0.22 eV, andEC– 0.17 eV. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)