Layer-to-island growth of electrodeposited Cu2O films and filamentary switching in single-channeled grain boundaries
Layer-to-island growth of electrodeposited Cu2O films and filamentary switching in single-channeled grain boundaries
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DOI：
10.1063/1.3310805
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发表时间：
2010-03
影响因子：
3.2
通讯作者：
Sung-Oong Kang;Sahwan Hong;J. Choi;J. S. Kim;I. Hwang;Ik-Su Byun;Y. Kim;Wondong Kim;B. Park
中科院分区：
文献类型：
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作者：
Sung-Oong Kang;Sahwan Hong;J. Choi;J. S. Kim;I. Hwang;Ik-Su Byun;Y. Kim;Wondong Kim;B. Park
我们研究了通过螯合物辅助电化学溶液方法获得的高度取向的柱状晶粒氧化亚铜 (Cu2O) 薄膜的生长行为。结果表明，Cu2O薄膜的电化学生长遵循层-岛生长模式，临界厚度为~190 nm。螯合剂诱导由单晶平面晶粒组成的平面薄膜的层生长，并影响保持在岛生长模式内的薄膜的择优取向。特别是，具有稳定界面和直径为 100-200 nm 的单晶柱状晶粒为丝状电阻开关提供了高度局部化的线性晶界区域。我们测量了平面薄膜的不同传导行为，分别显示沉积薄膜和退火薄膜中的非开关欧姆传导和单极存储开关。人们发现这些不同的传导行为源于微观结构的变化产生......
We investigated a growth behavior of highly oriented and columnar grained cuprous oxide (Cu2O) films, which were obtained through a chelate-assisted electrochemical solution approach. It was demonstrated that the electrochemical growth of Cu2O films followed a layer-to-island growth mode with a critical thickness of ∼190 nm. The chelating agent induced the layer-growth of flat-surfaced films consisting of single-crystalline planar grains, and influenced the preferred orientation of films maintained within the island-growth mode. In particular, the single-crystalline columnar grains with stable interfaces and diameters of 100–200 nm provided highly localized areas of linear grain boundaries for filamentary resistive switching. We measured different conduction behaviors of flat-surfaced films showing nonswitching Ohmic conduction and unipolar memory switching in as-deposited and annealed films, respectively. These different conduction behaviors were found to originate from the microstructure changes generat...