Local capacitance-voltage profiling on MoS2/SiO2 and MoS2/h-BN/SiO2 by scanning nonlinear dielectric microscopy assisted with an insulating tip
Local capacitance-voltage profiling on MoS2/SiO2 and MoS2/h-BN/SiO2 by scanning nonlinear dielectric microscopy assisted with an insulating tip
复制标题
DOI：
10.1109/edtm53872.2022.9798093
复制
发表时间：
2022-03
期刊：
影响因子：
--
通讯作者：
T. Ishizuka;K. Yamasue;Yasuo Cho
中科院分区：
文献类型：
--
作者：
T. Ishizuka;K. Yamasue;Yasuo Cho
原子层半导体（例如少层MoS2）的载流子传输特性可能受到层与衬底之间的界面的影响。为了研究源自界面的影响，我们基于时间分辨扫描非线性介电显微镜对 MoS2/SiO2 和 MoS2/h-BN/SiO2 进行纳米级电容电压分析。我们发现 MoS2/h-BN/SiO2 的局部 CV 曲线的斜率高于 MoS2/SiO2，这表明 MoS2/h-BN/SiO2 的界面缺陷密度较低。
Carrier transport property of atomic-layer semiconductors such as few-layer MoS2 can be affected by the interface between the layers and the substrate. In order to investigate the influences originating from the interface, here we perform nanoscale capacitance-voltage profiling of MoS2/SiO2 and MoS2/h-BN/SiO2 based on time-resolved scanning nonlinear dielectric microscopy. We show that MoS2/h-BN/SiO2 has higher slopes in local CV profiles than MoS2/SiO2, which suggests lower interface defect density on MoS2/h-BN/SiO2.