Efficient photovoltage multiplication in carbon nanotubes
Efficient photovoltage multiplication in carbon nanotubes
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DOI：
10.1038/nphoton.2011.250
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发表时间：
2011-11
期刊：
影响因子：
35
通讯作者：
L. Yang;Sheng Wang;Qingsheng Zeng;Zhiyong Zhang;T. Pei;Yan Li;Lianmao Peng
中科院分区：
文献类型：
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作者：
L. Yang;Sheng Wang;Qingsheng Zeng;Zhiyong Zhang;T. Pei;Yan Li;Lianmao Peng
碳纳米管是直接带隙材料，不仅可用于纳米电子应用，而且有可能对下一代光伏技术产生重大影响。半导体单壁碳纳米管（SWCNT）具有不寻常的能带结构，因此已经预测并观察到高效的载流子倍增效应，并且已经报道了吸收接近100%的SWCNT膜。对于光伏应用也很重要的其他特征包括高迁移率，以及电子和空穴的欧姆接触的可用性。然而，从典型的半导体SWCNT产生的光电压小于0.2V，这对于大多数实际光伏应用来说太小了。在这里，我们表明，这个值可以很容易地通过使用在碳纳米管的虚拟接触倍增。在一个示例中，从10 μ m长的碳纳米管产生大于1.0V，单电池光电压为1.000.2V。
Carbon nanotubes are direct-bandgap materials that are not only useful for nanoelectronic applications,, but also have the potential to make a significant impact on the next generation of photovoltaic technology,,. A semiconducting single-walled carbon nanotube (SWCNT) has an unusual band structure, as a result of which high-efficiency carrier multiplication effects have been predicted and observed,and films of SWCNTs with absorption close to 100% have been reported. Other features that are also important for photovoltaic applications include high mobility,and the availability of ohmic contacts for both electrons,and holes. However, the photovoltage generated from a typical semiconducting SWCNT is less than 0.2 V, which is too small for most practical photovoltaic applications. Here, we show that this value may be readily multiplied by using virtual contacts at the carbon nanotube. In one example, more than 1.0 V is generated from a 10-μm-long carbon nanotube with a single-cell photovoltage of ∼0.2 V.