Rapid Epitaxial Growth of GdBa2Cu3O7-sigma Films by Dilute Co Doping
Rapid Epitaxial Growth of GdBa2Cu3O7-sigma Films by Dilute Co Doping
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稀钴掺杂快速外延生长 GdBa2Cu3O7-sigma 薄膜
DOI：
10.1007/s10948-019-5131-3
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发表时间：
2019
影响因子：
1.8
通讯作者：
Zhao Yong
中科院分区：
文献类型：
--
作者：
Huo Baolei;Wang Wentao T.;Liu Lian;Wang Mingjiang;Yang Xue;Yang Gansong;Tian Zhengjian;Zhao Yong
The effect of dilute Co doping on the epitaxial growth of GdBCO films was investigated by self-developed fluorine-free polymer-assisted metal-organic deposition (PA-MOD) method. Under the same sintering heat treatment, dilute Co doping dramatically improved the crystallinity, microstructure, and critical current density (Jc) of GdBCO films. HighJcof 4.0 MA/cm2at 77 K and self-field was obtained in Co-doped film after only sintering for 30 min, which is eight times of theJcfor the undoped film. Also, Co-doped GdBCO film sintered for as short as 20 min still possesses a highJcof 1.5 MA/cm2, whereas theJcis 0 for the similarly sintered pure film. These results suggest that dilute Co doping facilitates the epitaxial growth of the high-performance GdBCO film.
