Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
Cavity-quantum electrodynamics using a single InAs quantum dot in a microdisk structure
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DOI：
10.1063/1.1379987
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发表时间：
2001-06
影响因子：
4
通讯作者：
A. Kiraz;P. Michler;C. Becher;B. Gayral;A. Imamoğlu;Lidong Zhang;E. Hu;W. Schoenfeld;P. Petroff
中科院分区：
文献类型：
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作者：
A. Kiraz;P. Michler;C. Becher;B. Gayral;A. Imamoğlu;Lidong Zhang;E. Hu;W. Schoenfeld;P. Petroff
我们研究了腔量子电动力学（QED）效应在全半导体纳米结构的调谐一个单一的自组装InAs量子点（QD）到谐振与高品质因子微盘回音壁模式（WGM）。QD单激子（1X）共振的较强的温度依赖性允许我们通过改变样品温度来改变WGM和1X跃迁的相对能量。由于弱耦合腔QED机制，这两个耦合共振呈现交叉行为。我们证明激子寿命减少6由于珀塞尔效应通过调谐量子点与WGM共振。我们的实验还表明，单激子寿命与温度无关，直到50 K。
We investigate cavity-quantum electrodynamics (QED) effects in an all-semiconductor nanostructure by tuning a single self-assembled InAs quantum dot (QD) into resonance with a high quality factor microdisk whispering gallery mode (WGM). The stronger temperature dependence of the QD single-exciton (1X) resonance allows us to change the relative energy of the WGM and the 1X transitions by varying the sample temperature. The two coupled resonances exhibit crossing behavior due to the weak coupling cavity-QED regime. We demonstrate exciton lifetime reduction by 6 due to the Purcell effect by tuning the QD into resonance with the WGM. Our experiments also show that single-exciton lifetime is independent of temperature up to 50 K.