Nanolithography in polymethylmethacrylate: An atomic force microscope study
Nanolithography in polymethylmethacrylate: An atomic force microscope study
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聚甲基丙烯酸甲酯纳米光刻：原子力显微镜研究
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
L. Shirey
中科院分区：
文献类型：
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作者：
E. Dobisz;S. Brandow;R. Bass;L. Shirey
这项工作解决了在两个分子量（MW），950和50 K的聚甲基丙烯酸甲酯（PMMA）非常密集的纳米光刻分辨率图案的形成和发展。通过在50 kV下操作的JEOL JBX-5DII电子束光刻系统以8-10 nm的高斯探针标准偏差光刻限定图案。光刻图案由宽度为1至20 μm的垫和周期为40、60、80和100 nm的单通线光栅组成，其中在中心具有50 nm的曝光间隙。获取原子力显微镜图像。潜在的图像的50 nm的差距，观察到在一个更大的范围内的剂量和垫的大小，比发达国家的样品中观察到的。两种未图案化的抗蚀剂的形态相当，表现出平均粒径为52-53 nm且均方根表面粗糙度为0.2-0.3 nm的颗粒型结构。在开发的模式中，两种MW抗蚀剂的形态和分辨率非常不同。950 K抗蚀剂具有较好的抗蚀性能。
This work addresses the formation and development of very dense nanolithographic resolution patterns in polymethylmethacrylate (PMMA) of two molecular weights (MWs), 950 and 50 K. The patterns were lithographically defined by a JEOL JBX-5DII e-beam lithography system operated at 50 kV with a Gaussian probe standard deviation of 8–10 nm. The lithographic patterns consisted of pads of widths from 1 to 20 μm with a 50 nm gap of exposure in the center and single pass line gratings of periods 40, 60, 80, and 100 nm. Atomic force microscope images were acquired. Latent images of the 50 nm gap were observed over a much larger range in dose and pad size, than observed in developed samples. The morphologies of the two unpatterned resists were comparable exhibiting a granular type structure with average particle diameters of 52–53 nm and root mean square surface roughness of 0.2–0.3 nm. In developed patterns, the morphologies and resolution of the two MW resists were very different. The 950 K resist exhibited bette...