High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics
High-performance lead-free two-dimensional perovskite photo transistors assisted by ferroelectric dielectrics
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铁电介质辅助的高性能无铅二维钙钛矿光电晶体管
DOI：
10.1039/c8tc04691c
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发表时间：
2018
影响因子：
6.4
通讯作者：
Chu Junhao
中科院分区：
文献类型：
--
作者：
Wang Haoliang;Chen Yan;Lim Engliang;Wang Xudong;Yuan Sijian;Zhang Xin;Lu Haizhou;Wang Jiao;Wu Guangjian;Lin Tie;Sun Shuo;Wang Jianlu;Zhan Yiqiang;Shen Hong;Meng Xiangjian;Chu Junhao
这项研究的目的是了解内置铁电场对二维(2D)无铅钙钛矿材料光敏晶体管性能的影响。在本工作中，铁电聚合物聚(偏氟乙烯-三氟乙烯)(P(VDF-TrFE))和二维(2D)无铅钙钛矿((C6H5C2H4NH3)2SnI4)分别用作介质层和沟道层。我们观察到，在P(VDF-TrFE)作为介质层后，成功地消除了传输曲线中的大滞后，并且亚阈值摆动显著减小了一个数量级。在偏振“向上”和“向下”状态下，器件分别获得了较高的光开关开关比(>；100)和较短的光响应时间(50ms)。此外，该器件还表现出了14.57A W−1的高响应率和1.74×1012琼斯的高探测率。此外，低温溶液处理的P(VDFTrFE)和(C6H5C2H4NH3)2SnI4(金电极的接触除外)被认为是适合于未来柔性光敏晶体管应用的材料。
The purpose of this research was to understand the effect of a built-in ferroelectric field on the performance of two-dimensional (2D) lead-free perovskite material-based phototransistor applications. In this work, ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and two-dimensional (2D) lead-free perovskite ((C6H5C2H4NH3)2SnI4) were utilized as a dielectric layer and a channel layer, respectively. We observed that large hysteresis was successfully eliminated in the transfer curve, as well as the subthreshold swing being significantly reduced by one order of magnitude after P(VDF-TrFE) was introduced as a dielectric layer. Under polarization “up” and “down” states, the device achieved a high photo-switching on/off ratio (>100) and a short photoresponse time (50 ms), respectively. In addition to that, the device also demonstrated a high responsivity of 14.57 A W−1 and a high detectivity of 1.74 × 1012 Jones under the polarization “up” state with an illumination intensity of 21 μW cm−2. In addition, low temperature solution-processed P(VDF-TrFE) and (C6H5C2H4NH3)2SnI4 (except for the contacts of Au electrodes) in this work are considered to be suitable and compatible for flexible-based phototransistor applications in the future.