Concepts for diamond electronics
Concepts for diamond electronics
复制标题
DOI：
10.1016/j.tsf.2006.07.179
复制
发表时间：
2007-03-26
期刊：
影响因子：
2.1
通讯作者：
Denisenko, Andrej
中科院分区：
文献类型：
--
作者：
Kohn, Erhard;Denisenko, Andrej
综述了金刚石作为宽禁带（5.45eV）电子半导体材料的研究现状。由于金刚石不能掺杂浅杂质，因此必须开发特定的掺杂概念和相关的二极管和FET结构，仅限于p型硼掺杂。结果可以预测，金刚石高压开关二极管、高功率RF FET源和高温工作将超越采用SiC和GaN等竞争宽带隙材料设计的器件的能力。(c)2006 Elsevier B.V.保留所有权利。
The present status in the development of diamond as electronic semiconductor material with wide band-gap (5.45 eV) is reviewed. Since diamond cannot be doped with shallow impurities, specific doping concepts and related diode and FET structures had to be developed, restricted to p-type boron doping. The results allow to predict that diamond high voltage switching diodes, high power RF FET sources and operation at high temperature will surpass the capability of devices designed in competing wide band-gap materials like SiC and GaN. (c) 2006 Elsevier B.V. All rights reserved.