Theoretical investigation of the interface fluctuation causing low channel conductivity at SiO2/SiC interfaces through the self-energy and average Green’s function
Theoretical investigation of the interface fluctuation causing low channel conductivity at SiO2/SiC interfaces through the self-energy and average Green’s function
复制标题
通过自能和平均格林函数理论研究界面波动导致SiO2/SiC界面沟道电导率低
DOI：
10.1063/1.5098989
复制
发表时间：
2019
期刊：
影响因子：
1.6
通讯作者：
C. Rubio
中科院分区：
文献类型：
--
作者：
R. Arocho;M. Paredes;Joan Maurel;Martina Lema;W. M. Hart;C. Rubio
