Chemically Doped Random Network Carbon Nanotube p-n Junction Diode for Rectifier
Chemically Doped Random Network Carbon Nanotube p-n Junction Diode for Rectifier
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DOI：
10.1021/nn203391h
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发表时间：
2011-12-01
期刊：
影响因子：
17.1
通讯作者：
Lee, Young Hee
中科院分区：
文献类型：
--
作者：
Biswas, Chandan;Lee, Si Young;Lee, Young Hee
需要具有更高载流子迁移率和载流子密度的半导体来制造用于高速器件操作和高频信号处理的p-n结二极管。在这里，我们使用化学掺杂半导体单壁碳纳米管 (SWCNT) 随机网络作为场效应晶体管 (FET)，并通过制造 p-n 结二极管演示了在宽频率范围内工作的整流器。 p-n 二极管是使用原始的 p 型 SWCNT-FET 制造的，其中一半被 SiO2 覆盖，另一半使用苄基紫精分子进行化学掺杂，然后转换为 n 型沟道。随机网络 SWCNT p-n 结二极管的半波整流器清楚地突出了器件在高达 10 MHz 的高输入信号频率下运行时具有非常低的输出失真，这是商用硅 p-n 结二极管无法达到的。这些结果表明，随机网络 SWCNT p-n 结二极管可用作微电子、光电子、传感器和其他系统中一系列应用中复杂电路的构建块。
Semiconductors with higher carrier mobility and carrier density are required to fabricate a p-n junction diode for high-speed device operation and high-frequency signal processing. Here, we use a chemically doped semiconducting single-walled carbon nanotube (SWCNT) random network for a field effect transistor (FET) and demonstrate a rectifier operated at a wide range of frequencies by fabricating a p-n junction diode. The p-n diode was fabricated by using a pristine p-type SWCNT-FET where half was covered by SiO2 and the other half was chemically doped by using benzyl viologen molecules, which was converted into an n-type channel. The half-wave rectifier of the random network SWCNT p-n junction diode clearly highlights the device operation under high input signal frequencies up to 10 MHz with very low output distortion, which a commercial silicon p-n junction diode cannot access. These results indicate that the random network SWCNT p-n junction diodes can be used as building blocks of complex circuits in a range of applications in microelectronics, optoelectronics, sensors, and other systems.