VACANCIES AND DISLOCATION LOOPS IN GRAPHITE

VACANCIES AND DISLOCATION LOOPS IN GRAPHITE
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石墨中的空位和位错环

DOI：
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发表时间：
1962
期刊：
影响因子：
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通讯作者：
G. Hennig
G. Hennig
中科院分区：
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文献类型：
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作者：
G. Hennig

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采用电子显微镜研究确定石墨中空位的浓度和迁移率。晶体被淬火和退火到不同的温度。热处理前在应变下（有些故意弯曲）的晶体含有较多的环，而在无应变条件下处理的晶体则没有环。从3000℃淬火的晶体，即使在弯曲或用中子辐照时，也没有显示出环，这表明环不是由过量的淬火空位合并而产生的。(D.C.W.)
Electron microscope studies were undertaken to determine concentrations and mobilities of vacancies in graphite. Crystals were quenched and annealed to various temperatures. Crystals under strain (some deliberately bent) before heat treatment contained larger numbers of loops while crystals treated under strain- free conditions showed no loops. Crystals quenched from 3000 deg C showed no loops even when bent or irradiated with neutrons, indicating that loops are not produced by coalescing of excess quenchedin vacancies. (D.C.W.)