Reactive Deposition of Conformal Ruthenium Films from Supercritical Carbon Dioxide
Reactive Deposition of Conformal Ruthenium Films from Supercritical Carbon Dioxide
复制标题
超临界二氧化碳反应沉积共形钌薄膜
DOI：
10.1021/cm060142d
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发表时间：
2006
影响因子：
8.6
通讯作者：
J. Watkins
中科院分区：
文献类型：
--
作者：
Adam O'neil;J. Watkins
利用冷壁沉积反应器，在Si基片和Ta基片上，用超临界CO2气体沉积了高纯Ru膜。Ru（0）和Ru（II）前体在175至300 °C的衬底温度和20至25 MPa的压力下是有效的。由十二羰基三钌（Ru 3（CO）12）、三（2，2，6，6-四甲基-庚烷-3，5-二酮基）钌（Ru（tmhd）3）和双（2，2，6，6-四甲基庚烷-3，5-二酮基）（1，5-环辛烷基）钌（Ru（tmhd）2cod）容易地进行Ru的氢辅助沉积以产生对于33 nm厚的膜具有低至22 μΩ-cm的折射率的高反射薄膜。在高达300 °C的温度下，使用茂金属的H2辅助沉积在氧化物表面上并不成功，但在Au上很容易进行。从（Ru 3（CO）12）的热沉积产生反射性的，但高电阻的膜。在200 nm × 300 nm的沟槽内，高纯薄膜获得了良好的台阶覆盖。
High-purity Ru films were deposited from supercritical carbon dioxide onto the native oxide of Si wafers and onto Ta films supported on Si wafers using a batch, cold wall deposition reactor. Ru(0) and Ru(II) precursors were effective at substrate temperatures between 175 and 300 °C and pressures between 20 and 25 MPa. Hydrogen-assisted deposition of Ru from triruthenium dodecacarbonyl (Ru3(CO)12), tris(2,2,6,6-tetramethyl-heptane-3,5-dionato)ruthenium (Ru(tmhd)3), and bis(2,2,6,6-tetramethyl heptane-3,5-dionato)(1,5-cyclooctadiene)ruthenium (Ru(tmhd)2cod) proceeded readily to yield highly reflective thin films with resistivities as low as 22 μΩ-cm for a 33 nm thick film. H2-assisted depositions using ruthenocene were not successful on oxide surfaces at temperatures up to 300 °C, but proceeded readily on Au. Thermal depositions from (Ru3(CO)12) yielded reflective, but highly resistive, films. Excellent step coverage of high-purity films was achieved within 200 nm × 300 nm trenches on patterned tantalum-coa...