Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots
Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots
复制标题
热退火对自组装 InAs/GaAs 量子点光致发光影响模型的介绍和实验验证
DOI：
10.1063/1.3431388
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发表时间：
2010
影响因子：
3.2
通讯作者：
S. Chakrabarti
中科院分区：
文献类型：
--
作者：
M. Srujan;K. Ghosh;S. Sengupta;S. Chakrabarti
我们提出了热退火对单层InAs/GaAs量子点(QD)异质结的影响的模型，并研究了相应的全光致发光(PL)光谱的变化。In/Ga的相互扩散采用Fickian扩散模型，对电子和空穴分别求解薛定谔方程，得到了不同温度下异质结的基态光致发光峰。我们从理论上研究了应变效应和载流子限制势随退火而减小的现象。根据原子力显微镜(AFM)实验数据得到的量子点高度的对数正态分布，计算了在不同温度下退火的整个量子点系综的PL光谱。我们的计算结果说明了发光波长和线宽随退火后的蓝移，与在相同样品上的实验观测结果很好地吻合。这突显了该模型在精确辅助工程方面的潜力。
We present a model for the effect of thermal annealing on a single-layer InAs/GaAs quantum dot (QD) heterostructure and study the corresponding variation in full photoluminescence (PL) spectrum. In/Ga interdiffusion due to annealing is modeled by Fickian diffusion and the Schrodinger equation is solved separately for electrons and holes to obtain ground state PL peaks of the heterostructure at different annealing temperatures. We theoretically examine the decrease in strain effects and carrier confinement potentials with annealing. PL spectra of the entire ensemble of QDs, annealed at different temperatures, are calculated from a lognormal distribution of QD heights derived from experimental atomic force microscopy (AFM) data. Results from our calculations, which illustrate the blueshift in emission wavelength and linewidth variation in PL with annealing, are in excellent agreement with experimental PL observations on the same samples. This highlights the potential of the model to assist in precisely engi...
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H