Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction
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DOI：
10.1063/1.121056
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发表时间：
1998-03-16
影响因子：
4
通讯作者：
Khan, MA
中科院分区：
文献类型：
--
作者：
Kuksenkov, DV;Temkin, H;Khan, MA
我们研究了反向偏压下GaN p-n结的电导率和低频噪声的来源。通过空间电荷区缺陷态的载流子跳变被认为是导致低偏置电导率的主要机制。螺纹位错似乎是这种缺陷状态的最可能的来源。在较高偏置下，跳频由普尔-弗伦克尔发射补充。在二极管电流中观察到一个相对高水平的1/f类噪声。研究了噪声电流的偏置和温度依赖关系。(C) 1998美国物理研究所。
We study the origins of conductivity and low-frequency noise in GaN p-n junctions under reverse bias. Carrier hopping through defect states in the space charge region is identified as the main mechanism responsible for low bias conductivity. Threading dislocations appear the most likely source of such defect states. At higher bias hopping is supplemented with Poole-Frenkel emission. A relatively high level of 1/f-like noise is observed in the diode current. The bias and temperature dependencies of the noise current are investigated. (C) 1998 American Institute of Physics.