Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
复制标题
采用 LPCVD-SiNx 钝化和高温栅极凹槽制造的常断 GaN-on-Si MIS-HEMT
DOI：
10.1109/ted.2015.2510630
复制
发表时间：
2016-02-01
影响因子：
3.1
通讯作者：
Liu, Xinyu
中科院分区：
文献类型：
--
作者：
Shi, Yijun;Huang, Sen;Liu, Xinyu
采用低压化学气相沉积SiNx （LPCVD-SiNx）钝化和高温低损伤栅极凹槽技术制备了高电子迁移率GaN-on-Si MIS晶体管（MIS- hemt）。高热稳定性的LPCVD-SiNx实现了先钝化后欧姆的工艺策略，并有效抑制了钝化/HEMT界面的深态。制备的miss - hemt在漏极电流为1 μ a /mm时具有+0.85 V的高V- th和10（10）的开/关电流比，同时与等离子体增强化学气相沉积SiO2钝化相比降低了动态导通电阻。高场效应通道迁移率为180 cm(2)/V。s，最大漏极电流密度可达663 mA/mm。
Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiNx (LPCVD-SiNx) passivation and high-temperature low-damage gate-recess technique. The high-thermal-stability LPCVD-SiNx enables a passivation-prior-to-ohmic process strategy and effectively suppresses deep states at the passivation/HEMT interface. The fabricated MIS-HEMTs feature a high V-TH of +0.85 V at the drain current of 1 mu A/mm and a remarkable ON/OFF current ratio of 10(10) while reduced dynamic ON-resistance as compared to plasma-enhanced chemical-vapor-deposited SiO2 passivation. High field-effect channel mobility of 180 cm(2)/V . s is achieved, leading to a high maximum drain current density of 663 mA/mm.