Dislocation reduction in GaN films through selective island growth of InGaN
Dislocation reduction in GaN films through selective island growth of InGaN
复制标题
通过 InGaN 的选择性岛生长减少 GaN 薄膜的位错
DOI：
10.1063/1.1319528
复制
发表时间：
2000
影响因子：
4
通讯作者：
U. Mishra
中科院分区：
文献类型：
--
作者：
S. Keller;G. Parish;J. Speck;S. Denbaars;U. Mishra
在蓝宝石和硅衬底上生长的 GaN 薄膜中的位错减少是通过在用氮化硅亚单层对 GaN 表面进行部分钝化后插入以选择性岛生长模式生长的薄 InGaN 层来实现的。我们证明，当纯刃位错密度较高（即 >1010 cm−2）时，该技术在降低纯刃位错密度方面最为有效，而当密度在 108–109 cm−2 范围内时，该技术对于降低纯刃位错密度较小。因此，通常高度位错的硅基氮化镓薄膜的结构质量可以得到显着改善，从（0002）半高全宽（FWHM）从普通硅基氮化镓的1300角秒减少到具有氮化硅/InGaN夹层的氮化镓薄膜的800角秒可见一斑。对于在蓝宝石上生长的 GaN 层（位错密度 ~109 cm−2），该方法主要导致 (1012) 和 (2021) 衍射峰的半峰宽降低。
Dislocation reduction in GaN films grown on sapphire and silicon substrates was achieved by inserting thin InGaN layers grown in a selective island growth mode after partial passivation of the GaN surface with a submonolayer of silicon nitride. We show that this technique is most effective at reducing the pure edge dislocation density when it is high (i.e., >1010 cm−2) and less when the density is in the 108–109 cm−2 range. Thus, the structural quality of typically highly dislocated GaN on silicon films could be significantly improved, visible in a reduction of the (0002) full width at half maximum (FWHM) from 1300 arcsec for ordinary GaN on silicon to 800 arcsec for GaN films with silicon nitride/InGaN interlayers. In the case of GaN layers grown on sapphire (dislocation density ∼109 cm−2), the method resulted mainly in a reduction of the FWHM of the (1012) and (2021) diffraction peaks.