Giant intrinsic spin and orbital hall effects in Sr2MO4 (M=Ru, Rh, Mo).
Giant intrinsic spin and orbital hall effects in Sr2MO4 (M=Ru, Rh, Mo).
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DOI：
10.1103/physrevlett.100.096601
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发表时间：
2007-02
影响因子：
8.6
通讯作者：
H. Kontani;Takeshi Tanaka;D. Hirashima;K. Yamada;J. Inoue
中科院分区：
文献类型：
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作者：
H. Kontani;Takeshi Tanaka;D. Hirashima;K. Yamada;J. Inoue
通过研究金属d电子体系中Sr_2MO_4（M=Ru，Rh，Mo）的t_2g轨道紧束缚模型，研究了金属d电子体系的本征自旋霍尔电导（SHC）和d轨道霍尔电导（OHC）.获得的电导率是一个或2个数量级大于约5%的空穴掺杂的p型半导体的预测值。这些巨大的霍尔效应的起源是“有效Aharonov-Bohm相位”，这是由d-原子角动量与自旋轨道相互作用和轨道间跳跃积分引起的。由这种机制产生的巨大的SHC和OHC有望普遍存在于多轨道过渡金属化合物中，这为实现自旋电子学以及“轨道电子学”器件提供了可能性。
We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t2g-orbital tight-binding model for Sr2MO4 (M=Ru, Rh, Mo). The conductivities obtained are one or 2 orders of magnitude larger than predicted values for p-type semiconductors with approximately 5% hole doping. The origin of these giant Hall effects is the "effective Aharonov-Bohm phase" that is induced by the d-atomic angular momentum in connection with the spin-orbit interaction and the interorbital hopping integrals. The huge SHC and OHC generated by this mechanism are expected to be ubiquitous in multiorbital transition metal compounds, which opens the possibility of realizing spintronics as well as "orbitronics" devices.