Residual layer lithography
Residual layer lithography
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DOI：
10.1016/j.mee.2014.05.008
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发表时间：
2014-07-01
影响因子：
2.3
通讯作者：
Scheer, Hella-Christin
中科院分区：
文献类型：
--
作者：
Dhima, Khalid;Steinberg, Christian;Scheer, Hella-Christin
残余层光刻利用纳米压印负性光致抗蚀剂的图案倍频，所述纳米压印负性光致抗蚀剂经受UV泛光曝光，残余层的厚度约为四分之一波长。约260 nm的压印台阶的高度为沿压印边缘的相消干涉沿着提供了理想的条件。在这样的条件下，该残留层的中心被很好地曝光，而衍射和干涉效应导致沿压印图案的边缘沿着曝光不足。在泛光曝光和曝光后烘烤之后，曝光不足区域中的残留层可以简单地通过显影去除，这导致沿着压印边缘的沟槽。宽度为60-70 nm的图案可以通过具有在曝光波长范围内的印模几何形状的压印来实现。通过溅射和剥离转移到Cr金属结构中提供了合适的蚀刻掩模。(C)2014爱思唯尔有限公司版权所有。
Residual layer lithography makes use of pattern frequency doubling with nanoimprinted negative tone photoresists that are subjected to an UV-flood exposure, with a residual layer of a thickness of about a quarter-wavelength. A height of the imprinted step of about 260 nm provides ideal conditions for destructive interference along the imprinted edges. Under such conditions the centre of this residual layer is well exposed, whereas diffraction and interference effects result in under-exposure along the edges of the imprinted patterns. After flood exposure and post exposure bake the residual layer in the underexposed regions can simply be removed by development which results in trenches along the imprinted edges. Patterns 60-70 nm in width could be achieved by an imprint with stamp geometries in the range of the exposure wavelength. The transfer into Cr metal structures by sputtering and lift-off provides a suitable etch mask. (C) 2014 Elsevier B.V. All rights reserved.