Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system.
Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system.
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Ti-Si 系统中界面形成的俄歇和电子能量损失光谱研究。
DOI：
10.1103/physrevb.41.3087
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
Lannoo
中科院分区：
文献类型：
--
作者：
Wallart;Nys;Zeng;Dalmai;Lefèbvre;Lannoo
本文详细研究了不同温度条件下钛-硅（Ti-Si）系统界面的形成。我们利用电子结构计算解释了Si ${L}_{2}$，3VV俄歇线的形状和电子能量损失谱。这些技术，连同低能量电子衍射和电子显微镜观察和膜电阻数据，使我们能够准确地讨论相对于温度的Ti-Si系统的界面反应性。
We present a detailed study of interface formation in the titanium-silicon (Ti-Si) system under different temperature conditions. We make use of electronic-structure calculations in order to interpret the silicon Si ${L}_{2}$,3VV Auger line shape and the electron-energy-loss spectra. These techniques, together with low-energy electron diffraction and electron-microscopy observations and film-resistance data, allow us to discuss accurately the interface reactivity of the Ti-Si system with respect to temperature.