Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells
Improved Conversion Efficiency of GaN/InGaN Thin-Film Solar Cells
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DOI：
10.1109/led.2009.2021414
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发表时间：
2009-06
影响因子：
4.9
通讯作者：
R. Horng;S. Lin;Yu-Li Tsai;M. Chu;Wen-Yih Liao;Ming-Hsien Wu;R. Lin;Yuan-Chieh Lu
中科院分区：
文献类型：
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作者：
R. Horng;S. Lin;Yu-Li Tsai;M. Chu;Wen-Yih Liao;Ming-Hsien Wu;R. Lin;Yuan-Chieh Lu
在这封信中，我们报告了 p-i-n GaN/InGaN 薄膜太阳能电池的制造和光伏特性。薄膜太阳能电池的制造方法是使用激光剥离技术去除蓝宝石，然后通过晶圆键合将剩余的 p-i-n 结构转移到钛/银镜面涂层的硅基板上。镜面结构有助于增强吸收层薄的太阳能电池的光吸收。传统蓝宝石基 p-i-n 太阳能电池经过薄膜工艺处理后，电流密度提高了 57.6%，转换效率从 0.55% 提高到 0.80%。薄膜太阳能电池中光电流增强的物理起源与镜结构对光的多次反射有关。
In this letter, we report on the fabrication and photovoltaic characteristics of p-i-n GaN/InGaN thin-film solar cells. The thin-film solar cells were fabricated by removing sapphire using a laser lift-off technique and, then, transferring the remaining p-i-n structure onto a Ti/Ag mirror-coated Si substrate via wafer bonding. The mirror structure is helpful to enhance light absorption for a solar cell with a thin absorption layer. After the thin-film process for a conventional sapphire-based p-i-n solar cell, the device exhibits an enhancement factor of 57.6% in current density and an increment in conversion efficiency from 0.55% to 0.80%. The physical origin for the photocurrent enhancement in the thin-film solar cell is related to multireflection of light by the mirror structure.