STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING
STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING
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SI1-XGEX 中重硼掺杂的应变补偿
DOI：
10.1063/1.114988
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发表时间：
1995
影响因子：
4
通讯作者：
G. Ritter
中科院分区：
文献类型：
--
作者：
B. Tillack;P. Zaumseil;G. Morgenstern;D. Krüger;G. Ritter
通过重硼掺杂在SiGe中的应变补偿被证明。为此，使用快速热化学气相沉积来沉积含有高达百分之几的硼的SiGe层。通过双晶X射线衍射测量掺杂硼的样品和不含硼的参考样品的衍射峰距离之间的差异来评估应变补偿效果，该差异可以直接与由于掺入硼而导致的Si 1 −x−yGexBy中的晶格常数的降低相关。通过横截面透射电子显微镜（XTEM）、俄歇电子能谱（AES）和二次离子质谱（西姆斯）表征膜。
Strain compensation in SiGe by heavy boron doping was demonstrated. For this purpose, SiGe layers containing up to several percent of boron were deposited using rapid thermal chemical vapor deposition. The strain compensation effect was evaluated by double crystal x‐ray diffraction measuring the difference between the diffraction peak distances of the boron doped samples and a reference sample without boron which can be directly related to the decrease of the lattice constant in Si1−x−yGexBy due to the incorporation of boron. The films were characterized by cross‐sectional transmission electron microscopy (XTEM), Auger electron spectroscopy (AES), and secondary ion mass spectroscopy (SIMS).