Switchable double wavelength generating vertical external cavity surface-emitting laser.
Switchable double wavelength generating vertical external cavity surface-emitting laser.
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可切换双波长产生垂直外腔表面发射激光器。
DOI：
10.1364/oe.22.006447
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发表时间：
2014
期刊：
影响因子：
3.8
通讯作者：
K. Gołaszewska
中科院分区：
文献类型：
--
作者：
J. Muszalski;Artur Broda;A. Trajnerowicz;A. Wójcik;R. Sarzała;M. Wasiak;P. Gutowski;I. Sankowska;J. Kubacka;K. Gołaszewska
可切换的，双波长产生演示了从一个单一的垂直外腔面发射激光器芯片。两个波长λ = 967 nm和1，018 nm（即在51 nm的光谱距离内）的功率约为0.5 W。在半导体异质结构中，单组名义上相同的量子威尔斯被封闭在单个双模谐振微腔中。泵浦光功率的变化引起了波长的开关。泵浦功率的增加或减少改变了有源区温度，从而在光谱上将增益谱调谐到两种模式之一。
Switchable, double wavelength generation is demonstrated from a single vertical external cavity surface-emitting laser chip. Power of ~0.5 W for two wavelengths λ≈967 nm and 1,018 nm i.e. within the spectral distance of 51 nm were registered. In the semiconductor heterostructure a single set of nominally identical quantum wells was enclosed in a single, two-mode resonant microcavity. The wavelength switching was induced by the change of the pump power. The increase or decrease of the pump power changes the active region temperature and thus tunes spectrally the gain spectrum to the one of two modes.