Metal Ion-Incorporated Lead-Free Perovskites toward Broadband Photodetectors
Metal Ion-Incorporated Lead-Free Perovskites toward Broadband Photodetectors
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DOI：
10.1021/acsaelm.2c01265
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发表时间：
2023-01
影响因子：
4.7
通讯作者：
Junhua Shen;Weiguang Zhu;Zhen Lian;Aming Lin;Sufei Shi;Kun Yang;Mingxin Li;Dong Zhao;
中科院分区：
文献类型：
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作者：
Junhua Shen;Weiguang Zhu;Zhen Lian;Aming Lin;Sufei Shi;Kun Yang;Mingxin Li;Dong Zhao;
金属卤化物钙钛矿以其优异的光电性能引起了广泛的研究兴趣。cs2sni6因其高稳定性、合适的带隙和高吸收系数而成为先进光电子领域中有前途的无铅钙钛矿。与铅基钙钛矿相比，二维（2D） cs2sni6光电探测器的性能受到限制。在这里，我们报告了一种简单的策略，将共价金属离子（镍和锌）掺入钙钛矿的掺杂或钝化，以提高其性能。利用共价金属离子打破二维Cs2SnI6固有的暗跃迁，大大提高了二维Cs2SnI6的光致发光能力，比原始Cs2SnI6提高了两个数量级。密度函数计算揭示了镍离子在不引入任何深阱态的情况下的n型掺杂。我们进一步证明了锌离子对二维cs2sni6的表面钝化可以大大降低表面陷阱/缺陷密度。价金属离子掺入的Cs2SnI6钙钛矿具有宽带探测、高响应率（ni掺入Cs2SnI6为1.6 × 103A W-1）和高探测率（zn掺入Cs2SnI6为1.56 × 1013Jones）。这些结果将促进对钙钛矿材料中金属离子影响的研究，这可能为下一代光电子学提供新的性能。
Metal halide perovskites have excited tremendous research interests due to their extraordinary photovoltaic and optoelectronic performance. Cs2SnI6has emerged as a promising lead-free perovskite in advanced optoelectronics due to its high stability, appropriate bandgap, and high absorption coefficient. The performance of two-dimensional (2D) Cs2SnI6-based photodetectors is limited as compared to lead-based perovskites. Here, we report a simple strategy for incorporating aliovalent metal ions (nickel and zinc) for doping or passivation of perovskites to improve their performance. Aliovalent metal ions are employed to break the inherent dark transition of the 2D Cs2SnI6, greatly increasing photoluminescence by two orders of magnitude than pristine Cs2SnI6. Density function calculation reveals then-type doping of nickel ions without introducing any deep trap states. We further demonstrate that the surface passivation of 2D Cs2SnI6by zinc ions can greatly reduce surface trap/defect density. Aliovalent metal ion-incorporated Cs2SnI6perovskites exhibit broadband detection, high responsivity (1.6 × 103A W–1, for Ni-incorporated Cs2SnI6) and high detectivity (1.56 × 1013Jones, for Zn-incorporated Cs2SnI6). These results will prompt research on the influence of metal ions in perovskite materials that may afford novel properties for next-generation optoelectronics.