Theory of the quantum Hall effect in finite graphene devices

Theory of the quantum Hall effect in finite graphene devices
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有限石墨烯器件中的量子霍尔效应理论

DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
C. Liang
C. Liang
中科院分区：
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文献类型：
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作者：
Tobias Kramer;C. Kreisbeck;Viktor Krueckl;E. Heller;R. Parrott;C. Liang

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本文基于电流注入模型研究了石墨烯中的量子霍尔效应，该模型考虑了具有源极和漏极的有限矩形几何结构。在我们的模型中，存在的障碍，边缘状态的图片，扩展的国家，和本地化的国家，这被认为是不可或缺的成分，在描述QHE，不发挥重要作用。相反，在注入到石墨烯片中期间的边界条件（其通过欧姆接触的存在而强制执行）确定电流-电压特性。
We study the quantum Hall effect (QHE) in graphene based on the current injection model, which takes into account the finite rectangular geometry with source and drain electrodes. In our model, the presence of disorder, the edge-state picture, extended states, and localized states, which are believed to be indispensable ingredients in describing the QHE, do not play an important role. Instead the boundary conditions during the injection into the graphene sheet, which are enforced by the presence of the Ohmic contacts, determine the current-voltage characteristics.