Development of a GaAs avalanche electron-emitting diode cold-electron emitter
Development of a GaAs avalanche electron-emitting diode cold-electron emitter
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DOI：
10.1109/16.43778
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发表时间：
1989-11
影响因子：
3.1
通讯作者：
T. Zutphen
中科院分区：
文献类型：
--
作者：
T. Zutphen
在雪崩电子发射二极管（AEED）中，电子在雪崩击穿偏置的非常浅的p-n结的内部电场中被加速后发射。基于该原理的硅冷阴极已被证明具有约1000 A/（cm/sup 2/ sr V）的非常高的降低亮度，并且具有约百分之几的发射-结电流效率。由这些硅冷阴极上获得的结果触发，德尔夫特理工大学开始了关于该主题的研究项目。它的目的是研究除了硅之外的半导体是否会更好。砷化镓的研究开始了。选择GaAs的主要原因是关于技术可能性和物理特性的现有信息。为了获得硅和砷化镓之间的直接比较，尽可能地模仿硅AEED的几何设计。从分子束外延生长衬底制造器件所涉及的工艺步骤也可以用于不同的材料。这些装置已在空气中测试其电性能，真空测试正在进行中。计划通过溅射低能（100-200 eV）惰性气体原子或离子来去除表面氧化物。>
In an avalanche electron-emitting diode (AEED), the electrons are emitted after being accelerated in the internal electric field of a very shallow p-n junction biased in avalanche breakdown. Silicon cold cathodes based on this principle have been shown to have a very high reduced brightness on the order of 1000 A/(cm/sup 2/ sr V) and have emission-to-junction current efficiencies on the order of a few percent. Triggered by the results obtained on these silicon cold cathodes, a research project on this subject was started at the Delft University of Technology. Its aim is to investigate whether a semiconductor other than silicon would be even better. Work was started on gallium arsenide. The main reason for choosing GaAs is the existing information on technological possibilities and physical properties. In order to obtain a direct comparison between silicon and gallium arsenide, the geometrical design of the silicon AEED is mimicked as well as possible. The process steps involved in making the devices from molecular-beam-epitaxy-grown substrates can also be used for different materials. The devices have been tested in air for their electrical properties, and vacuum tests are in progress. Removal of the surface oxides is planned by sputtering low-energy (100-200 eV) inert gas atoms or ions. >