Electrical properties of modulation-doped InxAl1−xAs/InyGa1−yAs structures on GaAs and InP substrates with 0.2⩽x, y⩽0.8
Electrical properties of modulation-doped InxAl1−xAs/InyGa1−yAs structures on GaAs and InP substrates with 0.2⩽x, y⩽0.8
复制标题
GaAs 和 InP 衬底上调制掺杂 InxAl1−xAs/InyGa1−yAs 结构的电性能（0.2⩽x, y⩽0.8）
DOI：
10.1116/1.591442
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发表时间：
2000
影响因子：
1.4
通讯作者：
D. Miller
中科院分区：
文献类型：
--
作者：
W. Cai;Z. Wang;D. Miller
我们研究了调制掺杂的InxAl 1 −xAs/InyGa 1 −yAs结构（0.2 <$x，y <$0.8）的表面形貌和电子性质对GaAs和InP衬底上应变弛豫缓冲层的组成依赖性。我们发现，调制掺杂的In0.70Al0.30As/In0.70Ga0.30As在InP上显示出二维电子气迁移率为1.3×104 cm 2/V s（300 K）和9.3×104 cm 2/V s（77 K），薄层载流子浓度为2.0×1012 cm−2。 我们认为，这种材料系统有一个潜在的设备应用，如果一个高品质的肖特基势垒层可以制造。
We have investigated the compositional dependence of surface morphology and electronic properties of modulation-doped InxAl1−xAs/InyGa1−yAs structures (0.2⩽x,y⩽0.8) on strain-relaxed buffers on GaAs and InP substrates. We have found that modulation-doped In0.70Al0.30As/In0.70Ga0.30As on InP shows a two-dimensional electron-gas mobility of 1.3×104 cm2/V s (300 K) and 9.3×104 cm2/V s (77 K) at a sheet carrier concentration of 2.0×1012 cm−2. We suggest that this material system has a potential for device applications if a high-quality Schottky barrier layer can be fabricated.