Fabrication of transparent CuxZnyS/ZnS heterojunction diodes by photochemical deposition
Fabrication of transparent CuxZnyS/ZnS heterojunction diodes by photochemical deposition
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光化学沉积法制备透明 CuxZnyS/ZnS 异质结二极管
DOI：
10.1002/pssc.201400229
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
M. Ichimura and Y. Maeda
中科院分区：
文献类型：
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作者：
山本賢宏;山田知宏;門谷豊;和泉亮;M. Ichimura and Y. Maeda
采用水溶液光化学沉积法(PCD)成功地制备了CuxZnyS/ZnS透明pn异质结。在PCD中，将衬底浸入距溶液表面约2~3 mm的溶液中，并通过透镜用超高压汞弧灯照射。CuxZnyS的生长溶液由5 mM的CuSO4、1 mM的ZnSO4、600 mM的Na2S2O和3 mM的Na2SO3组成。硫化锌的生长液中含有1 mM的硫化锌、600 mM的硫酸钠和3 mM的硫酸钠。光电化学测试证实了CuxZnyS的P型导电和ZnS的n型导电。这两种薄膜在可见光范围内都有很高的光学透过率(>；70%)。CuxZnyS/退火态-ZnS异质结具有整流特性和对AM1.5辐照的光响应。(2015Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
A CuxZnyS/ZnS transparent pn heterostructure was successfully fabricated by the photochemical deposition (PCD) from aqueous solutions. In PCD, the substrate was immersed in the solution to a depth of about 2‐3 mm from solution surface, and irradiated with the light of an ultra‐high‐pressure mercury arc‐lamp through a lens. The growth solution of CuxZnyS contained 5 mM CuSO4, 1 mM ZnSO4, 600 mM Na2S2O3, and 3 mM Na2SO3. The growth solution of ZnS contained 1 mM ZnSO4, 600 mM Na2S2O3, and 3 mM Na2SO3. p‐type conduction of CuxZnyS and n‐type conduction of ZnS were confirmed by the photoelectrochemical measurement. Both the films had high optical transmission (>70%) in the visible range. The CuxZnyS/annealed‐ZnS heterostructure showed rectification properties and photoresponse to AM1.5 irradiation. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)