Purification and preparation of TlBr crystals for room temperature radiation detector applications
Purification and preparation of TlBr crystals for room temperature radiation detector applications
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DOI：
10.1109/tns.2004.829383
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发表时间：
2003-10
影响因子：
1.8
通讯作者：
I. B. Oliveira;F. E. Costa;J. Chubaci;M. M. Hamada-M.
中科院分区：
文献类型：
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作者：
I. B. Oliveira;F. E. Costa;J. Chubaci;M. M. Hamada-M.
溴化铊（TlBr）是一种具有高原子序数和宽带隙的半导体化合物，是一种非常有前途的可用于室温辐射探测器的材料。在这项工作中，商用溴化铊粉末被用于生长用于探测器应用的晶体。为了减少杂质，该材料通过区域精炼技术进行了提纯。使用电感耦合等离子体质谱（ICP - MS）分析了十亿分率/百万分率水平的微量杂质。通过对溴化铊粉末和提纯材料中杂质浓度降低的研究来评估提纯的效率。通过X射线衍射（XRD）验证了晶体质量。为了评估该晶体作为半导体探测器的性能，对其透射率、电阻率以及（镅 - 241、钴 - 57、碘 - 125和钡 - 133）伽马射线的辐射响应进行了系统测量。
Thallium bromide (TlBr) is a semiconductor compound with a high atomic number and a wide bandgap, being a very promising material to be used as room temperature radiation detectors. In this work, commercial TlBr powder was used for growing crystals for detector applications. To reduce impurities, this material was purified by the zone refining technique. Trace impurities at ppb/ppm level were analyzed using inductively coupled plasma mass spectroscopy (ICP-MS). The efficiency of the purification was evaluated through studies of the decrease impurities concentrations in the TlBr powder and in the purified materials. The crystal quality was verified by X-ray diffraction (XRD). To evaluate the crystal as a semiconductor detector, systematic measurements of the transmittance, resistivity, and the radiation response (/sup 241/Am, /sup 57/Co, /sup 125/I, and /sup 133/Ba) gamma rays were carried out.