Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone
Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone
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DOI：
10.1016/j.ceramint.2016.10.186
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发表时间：
2017-02
影响因子：
5.2
通讯作者：
Young-Soo Lee;Dong-won Choi;Bonggeun Shong;Saeroonter Oh;Jin-seong Park
中科院分区：
文献类型：
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作者：
Young-Soo Lee;Dong-won Choi;Bonggeun Shong;Saeroonter Oh;Jin-seong Park
以二异丙基氨基硅烷（SiH3N(C3H7)2， DIPAS）为硅前驱体，臭氧为反应物，在100 ~ 200℃低温下采用原子层沉积（ALD）法制备二氧化硅（SiO2）薄膜。sio2薄膜表现出饱和生长行为，证实了ALD过程，在150°C时显示出1.2 Å/cycle的生长速率，在250°C时增加到2.3 Å/cycle。在100-200℃范围内提取的活化能为0.24 eV，与报道的DIPAS与表面-OH反应的能垒相对应。生长速率的温度依赖性可以用热活化前驱体在表面的覆盖范围和化学反应性来解释。在200°C下沉积的ald -SiO2薄膜显示出与常规沉积的SiO2相当的折射率、密度和粗糙度，以及低泄漏电流和高击穿场。在较高的沉积温度下，Si-O键的分数增加，而Si-OH键的分数则增加。
Silicon dioxide (SiO2) films are deposited by atomic layer deposition (ALD) at low temperatures from 100 to 200 °C using di-isopropylaminosilane (SiH3N(C3H7)2, DIPAS) as the Si precursor and ozone as the reactant. The SiO2films exhibit saturated growth behavior confirming the ALD process, showing a growth rate of 1.2 Å/cycle at 150 °C, which increases to 2.3 Å/cycle at 250 °C. The activation energy of 0.24 eV, extracted from temperature range of 100–200 °C, corresponds to the reported energy barrier for reaction between DIPAS and surface –OH. The temperature dependence of the growth rate can be explained in terms of the coverage and chemical reactivity of the thermally activated precursor on the surface. The ALD-SiO2films deposited at 200 °C show properties such as refractive index, density, and roughness comparable to those of conventionally deposited SiO2, as well as low leakage current and high breakdown field. The fraction of Si–O bond increases at the expense of Si–OH at higher deposition temperature.