Tunable chromaticity and high color rendering index of WLEDs with CaAlSiN3:Eu2+ and YAG:Ce3+ dual phosphor-in-silica-glass
Tunable chromaticity and high color rendering index of WLEDs with CaAlSiN3:Eu2+ and YAG:Ce3+ dual phosphor-in-silica-glass
复制标题
采用 CaAlSiN3:Eu2 和 YAG:Ce3 双荧光粉石英玻璃的 WLED 的可调谐色度和高显色指数
DOI：
10.1111/jace.17210
复制
发表时间：
2020
影响因子：
3.9
通讯作者：
Wang Lianjun
中科院分区：
文献类型：
--
作者：
Huang Ping;Zhao Yuye;Wang Jiancheng;Zheng Yaru;Yang Peng;Zheng Qi;Gu Shijia;Zhou Beiying;Jiang Wan;Wang Lianjun
玻璃中磷光体（PiG）作为高功率白色发光二极管（WLED）中磷光体和有机发光剂的潜在双替代物，由于其高的热稳定性和优异的发光性能而引起了人们的广泛关注。然而，由于高温敏感性和荧光粉与玻璃基质之间的化学反应，各种荧光粉，特别是红色荧光粉很难分散到玻璃中而不发生热猝灭和分解，这极大地限制了WLED显色指数和色度可调性的提高。本研究以介孔二氧化硅（FDU-12）和商业荧光粉为原料，采用放电等离子体烧结技术，在较低的烧结温度（950°C）和较短的制备时间（10 min）下成功制备了嵌入红色荧光粉CaAlSiN 3：Eu 2+和黄色荧光粉YAG：Ce 3+的SiO2玻璃中荧光粉（PiSGs）。由于嵌入荧光粉的原始发射特性得到了很好的保留，通过将所制备的PiSG封装在蓝光芯片上，制备了具有可调谐色度的温WLED，并表现出上级性能，LE为133 lm/W，CCT为3970 K，CRI为81。此外，PiSG复合材料具有高达1.6 W/m·K的高热导率。
Phosphors‐in‐glass (PiG), which serves as a potential bi‐replacement of both phosphors and organic encapsulants in high‐power white light‐emitting diodes (WLEDs), has captured much attention due to its high thermal stability and excellent luminescent properties. However, due to the high‐temperature sensitivity and the chemical reactions between phosphors with glass matrix, a variety of phosphors, especially red phosphors could be hardly dispersed into the glass without thermal quenching and decomposition, which greatly limits the improvement of color rendering index and chromaticity tunability of the WLEDs. In this study, adopting the mesoporous silica (FDU‐12) and commercial phosphors as raw materials, the phosphors‐in‐silica‐glasses (PiSGs) embedded with red phosphor CaAlSiN3:Eu2+and yellow phosphor YAG:Ce3+have been successfully prepared at low sintering temperature (950°C) and short preparation time (10 minutes) using spark plasma sintering. Owing to the well preservation of the originally emissive properties of the embedded phosphors, the warm WLEDs with tunable chromaticity and exhibited a superior performance with LE of 133 lm/W, CCT of 3970 K and CRI of 81 were fabricated by encapsulating the as‐prepared PiSGs on the blue chips. Moreover, the PiSG composite exhibits a high thermal conductivity up to 1.6 W/m·K.