Macroporous SiC Formation in Anodizing Triggered by Irradiation-Induced Lattice Defects
Macroporous SiC Formation in Anodizing Triggered by Irradiation-Induced Lattice Defects
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DOI：
10.1021/acs.jpcc.0c02491
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发表时间：
2020-04
影响因子：
3.7
通讯作者：
Y. Maeda;A. Muñoz-Noval;Emiri Suzuki;S. Kondo;A. Kitada;S. Shiki;M. Ohkubo;S. Hayakawa;K. Murase;Kazuhiro Fukami
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文献类型：
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作者：
Y. Maeda;A. Muñoz-Noval;Emiri Suzuki;S. Kondo;A. Kitada;S. Shiki;M. Ohkubo;S. Hayakawa;K. Murase;Kazuhiro Fukami
碳化硅（SiC）由于其优异的电子性能，在恶劣条件下的半导体器件和结构材料等方面的应用引起了人们的广泛关注。
Silicon carbide (SiC) attracts a lot of attention for several useful applications such as semiconductor devices and structural materials under severe conditions because of outstanding electronic pr...