Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold semi-insulating-GaAs Schottky diode
Magnetic-field-controllable avalanche breakdown and giant magnetoresistive effects in Gold semi-insulating-GaAs Schottky diode
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DOI：
10.1063/1.1834733
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发表时间：
2004-12-06
影响因子：
4
通讯作者：
Akinaga, H
中科院分区：
文献类型：
--
作者：
Sun, ZG;Mizuguchi, M;Akinaga, H
采用湿法刻蚀光刻工艺制备了金（Au）/半绝缘（SI）GaAs肖特基二极管。在磁场下测量的电流-电压曲线中观察到了与磁场相关的雪崩击穿现象。在外加磁场下，碰撞电离的雪崩击穿被推迟到更高的电场。因此，雪崩击穿的阈值电压随着所施加的磁场而增加。在0.2T以上，雪崩击穿被完全猝灭.当Au-Si-GaAs肖特基二极管工作在阈值电压以上时，在0.8T的磁场下可获得高达100000%的巨磁阻效应。(C)2004年，美国物理学会。
Gold (Au)/semi-insulating (SI)-GaAs Schottky diode was fabricated by the standard photolithography method using wet etching. Magnetic-field-dependent avalanche breakdown phenomena were observed in the current-voltage curves measured under magnetic field. The avalanche breakdown due to impact ionization was postponed to higher electrical field under applied magnetic field. Accordingly, threshold voltages of avalanche breakdown increased with the applied magnetic field. Above 0.2 T, avalanche breakdown was totally quenched. When Au-SI-GaAs Schottky diode was operated above the threshold voltage, giant mangetoresistive effects up to 100 000% were achieved under magnetic field of 0.8 T. (C) 2004 American Institute of Physics.