Vertical-type organic device using thin-film ZnO transparent electrode
Vertical-type organic device using thin-film ZnO transparent electrode
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DOI：
10.1002/eej.20151
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发表时间：
2007-01-30
影响因子：
0.4
通讯作者：
Kudo, Kazuhiro
中科院分区：
文献类型：
--
作者：
Iechi, Hiroyuki;Okawara, Takeshi;Kudo, Kazuhiro
我们提出了一种双异质结有机电致发光二极管（OLED）使用氧化锌（ZnO）薄膜，它作为一个透明和电子注入层。ZnO薄膜的晶体结构作为Ar/O-2流量比的函数和OLED的基本特性取决于ZnO溅射条件进行了研究。在22 V和7.6 mA/cm（2）下，器件的特性高达470 cd/m（2）。这里得到的结果表明，使用ZnO层作为电子注入层的垂直有机发光晶体管（OLET）是有前途的作为柔性片材显示器的关键元件。(c)2006 Wiley Periodicals，Inc.
We propose a double heterojunction organic light-emitting diode (OLED) using a zinc oxide (ZnO) film, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O-2 flow ratio and the basic characteristics of the OLED depending on the ZnO sputtering conditions are investigated. Excellent characteristics of the novel OLED were obtained, as high as 470 cd/m(2) at 22 V and 7.6 mA/cm(2). The results obtained here demonstrate that the vertical organic light-emitting transistor (OLET) using a ZnO layer as an electron injection layer is promising as a key element for flexible sheet displays. (c) 2006 Wiley Periodicals, Inc.