Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer
Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer
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DOI：
10.1016/j.vacuum.2022.111269
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发表时间：
2022-06
期刊：
影响因子：
4
通讯作者：
S. Ke;Jiahui Li;Jie Wang;Jinrong Zhou;Zhiwei Huang;J. Jiao;Ruoyun Ji;Songyan Chen
中科院分区：
文献类型：
--
作者：
S. Ke;Jiahui Li;Jie Wang;Jinrong Zhou;Zhiwei Huang;J. Jiao;Ruoyun Ji;Songyan Chen
