Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage
Multiple Moving Membrane CMUT With Enlarged Membrane Displacement and Low Pull-Down Voltage
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DOI：
10.1109/led.2013.2286902
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发表时间：
2013-11
影响因子：
4.9
通讯作者：
T. Emadi;D. Buchanan
中科院分区：
文献类型：
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作者：
T. Emadi;D. Buchanan
多移动膜电容微机械超声换能器 (M3-CMUT) 已被制造出来，并且在相同偏置电压下，与传统 CMUT 的位移 (~ 85 nm) 相比，其总膜位移 (~ 280 nm) 显着增大。在 25 V 直流偏压下，M3-CMUT 表现出器件下拉电压的显着降低，同时显示出更高的电容变化，M3-CMUT 为 100 fF，而 CMUT 仅为 20 fF。器件性能、灵敏度和声波发电能力主要与膜的位移幅度相关，因此，通过在 M3-CMUT 器件中采用多个可偏转膜来增强器件性能、灵敏度和声发电能力。这种高性能 M3-CMUT 是高分辨率超声成像应用的有前途的候选者。
A multiple moving membrane capacitive micromachined ultrasonic transducer ( M3-CMUT) has been fabricated and is shown to exhibit a significantly enlarged total membrane displacement ( ~ 280 nm) compared with the displacement of a conventional CMUT ( ~ 85 nm) for the same bias voltage. The M3-CMUT exhibits a significant reduction of the device pull-down voltage, while showing a much higher capacitance change, 100 fF for the M3-CMUT compared with only 20 fF for CMUT, at a dc bias of 25 V. The device performance, sensitivity, and acoustic power generation capability are primarily associated with the magnitude of the displacement of the membrane, and therefore, are enhanced through employing multiple deflectable membranes in M3-CMUT device. This high performance M3-CMUT is a promising candidate for high resolution ultrasonic imaging application.