Anisotropic 2D SiAs for High-Performance UV-Visible Photodetectors
Anisotropic 2D SiAs for High-Performance UV-Visible Photodetectors
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DOI：
10.1002/smll.202006310
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发表时间：
2021-02-16
期刊：
影响因子：
13.3
通讯作者：
Park, Jeunghee
中科院分区：
文献类型：
--
作者：
Kim, Doyeon;Park, Kidong;Park, Jeunghee
最近，人们致力于寻找具有各向异性晶体结构的新型二维层状结构。在此，报道了使用固态反应和随后的机械剥离合成的 2D SiAs 纳米片的面内各向异性光学和（光）电性质。角度分辨偏振拉曼光谱显示出声子振动模式的高面内各向异性，这与理论预测一致。使用 SiAs 纳米片制造的场效应晶体管器件表现出显着的空穴迁移率各向异性，各向异性比高达 5.5。采用单SiAs纳米片制作的光电探测器在紫外-可见光区域表现出高灵敏度，光电流各向异性比在514.5 nm处达到5.3，在325 nm处达到2.3。这项工作为未来各向异性二维材料的研究奠定了基础。
Recently, extensive efforts have been directed at finding novel 2D-layered structures with anisotropic crystal structures. Herein, the in-plane anisotropic optical and (photo)electrical properties of 2D SiAs nanosheets synthesized using a solid-state reaction and subsequent mechanical exfoliation are reported. The angle-resolved polarized Raman spectrum shows high in-plane anisotropy of the phonon vibration modes, which are consistent with the theoretical prediction. Field-effect transistor devices fabricated using the SiAs nanosheets demonstrate significant anisotropy in the hole mobility with an anisotropic ratio as high as 5.5. Photodetectors fabricated with single SiAs nanosheet exhibit high sensitivity in the UV-visible region, and the anisotropic ratio of the photocurrent reaches 5.3 at 514.5 nm and 2.3 at 325 nm. This work lays the foundation for future research in anisotropic 2D materials.