Highly Luminescent (Zn,Cd)Te/CdSe Colloidal Heteronanowires with Tunable Electron-Hole Overlap
Highly Luminescent (Zn,Cd)Te/CdSe Colloidal Heteronanowires with Tunable Electron-Hole Overlap
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DOI：
10.1021/nl203695m
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发表时间：
2012-02-01
期刊：
影响因子：
10.8
通讯作者：
Donega, Celso de Mello
中科院分区：
文献类型：
--
作者：
Groeneveld, Esther;van Berkum, Susanne;Donega, Celso de Mello
本文报道了以ZnTe团簇为晶种，合成了超窄（Zn，Cd）Te/CdSe胶体异质纳米线。线的形成开始与部分锌镉阳离子交换，然后通过自组织成分段heteronanowires。进一步的生长通过包含CdSe而发生。异质纳米线在530至760 nm范围内发射，具有高量子产率。电子空穴重叠随着CdSe体积分数的增加而减小，从而允许通过调节异质纳米线组合物来控制光学性质。
We report the synthesis of ultranarrow (Zn,Cd)Te/CdSe colloidal heteronanowires, using ZnTe magic size clusters as seeds. The wire formation starts with a partial Zn for Cd cation exchange, followed by self-organization into segmented heteronanowires. Further growth occurs by inclusion of CdSe. The heteronanowires emit in the 530 to 760 nm range with high quantum yields. The electron hole overlap decreases with increasing CdSe volume fraction, allowing the optical properties to be controlled by adjusting the heteronanowire composition.