Real Time Analysis of Oxidation States on Si (001) Surfaces Caused by Translational Kinetic Energy of O2 by Means of Synchrotron Radiation Photoemission Spectroscopy
Real Time Analysis of Oxidation States on Si (001) Surfaces Caused by Translational Kinetic Energy of O2 by Means of Synchrotron Radiation Photoemission Spectroscopy
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同步辐射光电发射光谱实时分析O2平动动能引起的Si(001)表面氧化态
DOI：
10.3131/jvsj.45.204
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
Y. Teraoka
中科院分区：
文献类型：
--
作者：
A. Yoshigoe;Y. Teraoka
利用单色同步辐射的Si-2p和O-1s光电子能谱和超声分子束技术，在室温下对Si(001)-2×1表面的氧化态进行了“实时”原位观测。成功地测量了高分辨率的Si-2p光电子能谱，它明确地分辨了氧化态[Si1+，Si2+，Si3+和Si4+]的组分，每个谱只需要43秒。我们发现，在Si1+、Si2+和Si3+物种饱和后，Si4+物种逐渐增加，达到0.57 nm的氧化层厚度，平动能为2.9 eV。
Employing Si-2p and O-1s photoemission spectroscopy using monochromated synchrotron radiation and the supersonic molecular beam technique, we have performed “real time” in situ observations of oxidation states on the Si (001) -2×1 surface at room temperature. High-resolution Si-2p photoemission spectra, which unambiguously resolve components for oxidation states [Si1+, Si2+, Si3+ and Si4+], were successfully measured requiring only 43 sec per spectrum. We found that the Si4+ species gradually increased to reach the oxide thickness of 0.57 nm just after the saturation of Si1+, Si2+ and Si3+ species with a translational energy of 2.9 eV.