Nitride semiconductor devices : principles and simulation
Nitride semiconductor devices : principles and simulation
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DOI：
10.1002/9783527610723
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发表时间：
2007-01
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影响因子：
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通讯作者：
J. Piprek
中科院分区：
文献类型：
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作者：
J. Piprek
前言。投稿人列表。第1部分材料特性。1导言(Joachim Piprek)。1.1简史。1.2独特的材料特性。1.3热参数。参考资料。2电子能带结构参数(伊戈尔·伏尔加夫曼和曾傑瑞·R·迈耶)。2.1引言。2.2频带结构模型。2.3频带参数。2.4结论。参考资料。3自发和压电极化：基础理论与实践疗法(法比奥·贝尔纳迪尼)。3.1为什么在III-V氮化物中发生自发极化？3.2 AlN、GaN和InN中极化性质的理论预测。3.3 III-V氮化物纳米结构的压电性和热释电效应。3.4三元和四元合金的极化性质。3.5偏振的方位依赖性。参考资料。4电子和空穴的输运参数(Enrico Bellotti和Francesco Bertazzi)。4.1引言。4.2数值模拟模型。4.3运输参数的分析模型。4.4 GaN输运参数。4.5 ALN传输参数。4.6客栈运输参数。4.7结论。参考资料。5块状氮化物的光学常数(Rudiger Goldhahn，Carsten Buchheim，Pascal Schley，Andreas Theo Winzer和Hans Wenzel)。5.1引言。5.2介电功能和能带结构。5.3实验结果。5.4介电函数的建模。参考资料。6 AlGaN/GaN量子阱的亚带间吸收(Sulakshana Gunna，Francesco Bertazzi，Roberto Paiella和Enrico Bellotti)。6.1引言。6.2理论模型。6.3数值实现。6.4 AlGaN-GaN多量子阱中的吸收能。6.5结论。参考资料。7 InGaN量子阱中的带间跃迁(Jorg Hader，Jerome V.Moloney，Angela Thranhardt和Stephan W.Koch)。7.1引言。7.2理论。7.3理论-实验增益比较。7.4吸收/增益。7.5自发辐射。7.6俄歇重组。7.7内场效应。7.8摘要。参考资料。8具有(1010)晶体取向的GaN基量子阱的电学和光学性质(Seoung-Hwan Park和Shun-Lien庄)。8.1引言。8.2理论。8.2.1具有多体效应的非马尔可夫增益模型。8.3结果和讨论。8.4总结。参考资料。9量子点系统中的载流子散射(Frank Jahnke)。9.1引言。9.2载流子-载流子库仑相互作用引起的散射。9.3载流子-声子相互作用引起的散射。9.4总结和展望。参考资料。第2部分设备。10个AlGaN/GaN高电子迁移率晶体管(Tomas Palcios和Uesh K.Mishra)。10.1导言。10.2基于物理的模拟。10.3结论。参考资料。11个用于光通信的子带间光开关(铃木信雄)。11.1导言。11.2氮化物多量子阱中ISBT的物理特性。11.3吸收光谱的计算。11.4 GaN/AlGaN ISBT开关的FDTD模拟器。参考资料。12子带间电吸收调制器(Petter Holmstrom)。12.1引言。12.2调制器结构。12.3型号。12.4个结果。12.5摘要。参考资料。13个紫外光发光二极管(郭燕光、严胜宏、陈俊荣)。13.1引言。13.2器件结构。13.3物理模型和参数。13.4模拟结果与实验结果的比较。13.5性能优化。13.6结论。参考资料。14个可见光发光二极管(Sergey Yu.卡尔波夫)。14.1引言。14.2模拟方法和材料特性。14.3设备分析。14.4新颖的LED结构。14.5结论。参考资料。15使用磷光介质产生白光的LED模拟(Norbert Linder、Dominik Eisert、Frank Jermann和Dirk Berben)。15.1引言。15.2转换LED型号的要求。15.3转换LED的颜色指标。15.4荧光粉模型。15.5仿真实例。15.6结论。参考资料。16边缘发射激光器的基本特性(原一Hatakoshi)16.1引言。16.2器件模拟的基本方程。16.3电气特性仿真和载波溢出分析。16.4垂直横模和光束质量分析。16.5热分析。16.6结论。参考资料。17 InGaN/GaN/AlGaN激光器中的共振内横模耦合(Gennady A.Smolyakov和Marek Osinski)。17.1引言。17.2内模耦合和“鬼模”概念。17.3器件结构和材料参数。17.4计算技巧。17.5计算结果。17.6讨论和结论。参考资料。18边缘发射激光器的光学特性：测量和模拟(Ulrich T.Schwarz和Bernd Witzigmann)。18.1引言。18.2波导模式稳定性。18.3光波导损耗。18.4模式增益分析。18.5结论。参考资料。19 InGaN/GaN垂直腔激光器的电子特性(Joachim Piprek，Li占明，Robert Farrell，Steven P.DenBaars和Shuji Nakamura)。19.1垂直腔激光器简介。19.2 GaN基VCSEL结构。19.3理论模型和材料参数。19.4仿真结果和器件分析。19.5摘要。参考资料。20垂直腔激光器的光学设计(沃德齐米尔茨·纳克瓦斯基、托马兹·齐萨诺夫斯基和罗伯特·P·萨尔萨拉)。20.1引言。20.2 GaN VCSEL结构。20.3标量光学方法。20.4矢量光学方法。20.5自洽计算算法。20.6仿真结果。20.7讨论和结论。参考资料。21 GaN纳米线激光器(Alexey V.Maslov和村正宁)。21.1引言。21.2纳米线的生长和表征。21.3纳米线激光原理。21.4材料增益各向异性。21.5引导模式。21.6模式增益和阈值。21.7结论。参考资料。索引。
Preface. List of Contributors. Part 1 Material Properties. 1 Introduction (Joachim Piprek). 1.1 A Brief History. 1.2 Unique Material Properties. 1.3 Thermal Parameters. References. 2 Electron Bandstructure Parameters (Igor Vurgaftman and Jerry R. Meyer). 2.1 Introduction. 2.2 Band Structure Models. 2.3 Band Parameters. 2.4 Conclusions. References. 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes (Fabio Bernardini). 3.1 Why Spontaneous Polarization in III-V Nitrides? 3.2 Theoretical Prediction of Polarization Properties in AlN, GaN and InN. 3.3 Piezoelectric and Pyroelectric Effects in III-V Nitrides Nanostructures. 3.4 Polarization Properties in Ternary and Quaternary Alloys. 3.5 Orientational Dependence of Polarization. References. 4 Transport Parameters for Electrons and Holes (Enrico Bellotti and Francesco Bertazzi). 4.1 Introduction. 4.2 Numerical Simulation Model. 4.3 Analytical Models for the Transport Parameters. 4.4 GaN Transport Parameters. 4.5 AlN Transport Parameters. 4.6 InN Transport Parameters. 4.7 Conclusions. References. 5 Optical Constants of Bulk Nitrides (Rudiger Goldhahn, Carsten Buchheim, Pascal Schley, Andreas Theo Winzer, and Hans Wenzel). 5.1 Introduction. 5.2 Dielectric Function and Band Structure. 5.3 Experimental Results. 5.4 Modeling of the Dielectric Function. References. 6 Intersubband Absorption in AlGaN/GaN Quantum Wells (Sulakshana Gunna, Francesco Bertazzi, Roberto Paiella, and Enrico Bellotti). 6.1 Introduction. 6.2 Theoretical Model. 6.3 Numerical Implementation. 6.4 Absorption Energy in AlGaN-GaN MQWs. 6.5 Conclusions. References. 7 Interband Transitions in InGaN Quantum Wells (Jorg Hader, Jerome V. Moloney, Angela Thranhardt, and Stephan W. Koch). 7.1 Introduction. 7.2 Theory. 7.3 Theory-Experiment Gain Comparison. 7.4 Absorption/Gain. 7.5 Spontaneous Emission. 7.6 Auger Recombinations. 7.7 Internal Field Effects. 7.8 Summary. References. 8 Electronic and Optical Properties of GaN-based Quantum Wells with (1010) Crystal Orientation (Seoung-Hwan Park and Shun-Lien Chuang). 8.1 Introduction. 8.2 Theory. 8.2.1 Non-Markovian gain model with many-body effects. 8.3 Results and Discussion. 8.4 Summary. References. 9 Carrier Scattering in Quantum-Dot Systems (Frank Jahnke). 9.1 Introduction. 9.2 Scattering Due to Carrier-Carrier Coulomb Interaction. 9.3 Scattering Due to Carrier-Phonon Interaction. 9.4 Summary and Outlook. References. Part 2 Devices. 10 AlGaN/GaN High Electron Mobility Transistors (Tomas Palacios and Umesh K. Mishra). 10.1 Introduction. 10.2 Physics-based Simulations. 10.3 Conclusions. References. 11 Intersubband Optical Switches for Optical Communications (Nobuo Suzuki). 11.1 Introduction. 11.2 Physics of ISBT in Nitride MQWs. 11.3 Calculation of Absorption Spectra. 11.4 FDTD Simulator for GaN/AlGaN ISBT Switches. References. 12 Intersubband Electroabsorption Modulator (Petter Holmstrom). 12.1 Introduction. 12.2 Modulator Structure. 12.3 Model. 12.4 Results. 12.5 Summary. References. 13 Ultraviolet Light-Emitting Diodes (Yen-Kuang Kuo, Sheng-Horng Yen, and Jun-Rong Chen). 13.1 Introduction. 13.2 Device Structure. 13.3 Physical Models and Parameters. 13.4 Comparison Between Simulated and Experimental Results. 13.5 Performance Optimization. 13.6 Conclusion. References. 14 Visible Light-Emitting Diodes (Sergey Yu. Karpov). 14.1 Introduction. 14.2 Simulation Approach and Materials Properties. 14.3 Device Analysis. 14.4 Novel LED Structures. 14.5 Conclusion. References. 15 Simulation of LEDs with Phosphorescent Media for the Generation of White Light (Norbert Linder, Dominik Eisert, Frank Jermann, and Dirk Berben). 15.1 Introduction. 15.2 Requirements for a Conversion LED Model. 15.3 Color Metrics for Conversion LEDs. 15.4 Phosphor Model. 15.5 Simulation Examples. 15.6 Conclusions. References. 16 Fundamental Characteristics of Edge-Emitting Lasers (Gen-ichi Hatakoshi). 16.1 Introduction. 16.2 Basic Equations for the Device Simulation. 16.3 Simulation for Electrical Characteristics and Carrier Overflow Analysis. 16.4 Perpendicular TransverseMode and Beam Quality Analysis. 16.5 Thermal Analysis. 16.6 Conclusions. References. 17 Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers (Gennady A. Smolyakov and Marek Osinski). 17.1 Introduction. 17.2 Internal Mode Coupling and the Concept of "Ghost Modes." 17.3 Device Structure and Material Parameters. 17.4 Calculation Technique. 17.5 Results of Calculations. 17.6 Discussion and Conclusions. References. 18 Optical Properties of Edge-Emitting Lasers: Measurement and Simulation (Ulrich T. Schwarz and Bernd Witzigmann). 18.1 Introduction. 18.2 Waveguide Mode Stability. 18.3 Optical Waveguide Loss. 18.4 Mode Gain Analysis. 18.5 Conclusion. References. 19 Electronic Properties of InGaN/GaN Vertical-Cavity Lasers (Joachim Piprek, Zhan-Ming Li, Robert Farrell, Steven P. DenBaars, and Shuji Nakamura). 19.1 Introduction to Vertical-Cavity Lasers. 19.2 GaN-based VCSEL Structure. 19.3 Theoretical Models and Material Parameters. 19.4 Simulation Results and Device Analysis. 19.5 Summary. References. 20 Optical Design of Vertical-Cavity Lasers (Wlodzimierz Nakwaski, Tomasz Czyszanowski, and Robert P. Sarzala). 20.1 Introduction. 20.2 The GaN VCSEL Structure. 20.3 The Scalar Optical Approach. 20.4 The Vectorial Optical Approach. 20.5 The Self-consistent Calculation Algorithm. 20.6 Simulation Results. 20.7 Discussion and Conclusions. References. 21 GaN Nanowire Lasers (Alexey V. Maslov and Cun-Zheng Ning). 21.1 Introduction. 21.2 Nanowire Growth and Characterization. 21.3 Nanowire Laser Principles. 21.4 Anisotropy of Material Gain. 21.5 Guided Modes. 21.6 Modal Gain and Threshold. 21.7 Conclusion. References. Index.